184 research outputs found
Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules
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Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings
Get PDFFailure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses
Get PDFEnsuring a Reliable Operation of Two-Level IGBT-Based Power Converters:A Review of Monitoring and Fault-Tolerant Approaches
Get PDFRadiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments
Full text linkThe radiation hardness of commercial Silicon Carbide and Gallium Nitride
power MOSFETs is presented in this paper, for Total Ionizing Dose effects and
Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar
tests are discussed for commercial DC-DC converters, also tested in operation
under magnetic field
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